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1. Parasitic Capacitance Analytical Model for Sub-7-nm Multigate Devices

   http://duke.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwjR3bSsMwNEyf9MHbBKdTIvgi2PWSpm1gDGQ6RHxQUYZPJUkTFOYmc_t_z0kvOBTxraWnt5yc-42Qs6AoeGZj5fFEJV4sZOgJBYRnuQhUkAlTOIf-OLt9iR4es9GwRS6aWhhjjEs-Mz08dLH8YqaX6CrzU-C2IRaMr6UiKGu1mogByPWyM3gIBAxmVx2SDIQPLABzuHgPxD3w5nBFBLmZKj8YsZMuo20yrr_LpVb3ytSS0smwknNdN2_87y_skK1K4aSX5Q7ZJS0z3SOb39oQtsndvZxLzN3SdAiyU78tcCtQ16_EubopTkybUNBvKTAaL_Wm77T_OnDFu-iGo1fGMZy-_zrYJ8-j66fhjVdNWfA0E8ECa3OEBlIPIg3Wk0lBQ9ShTmwqIyUTE4Y6iyPJUi4ZF0zCueXWwD8oq6JIcXZAKNNKWAsol0zgVCtgsWD8FhLwoAVjskP8esVzXfUexxEYk9zZIIHIAUc54iivcNQh580dH2XfjT9g27jQDVy1xh3SrZGaV4T5mYO2JDB2HbMOOW0uA0lhnEROzWyJMFmCcDw8_P3JR2QD3l8lb3fJ-mK-NMflNIkTtyu_ALR03j0

   by Martinie, S.; Jaud, M.-A; Barraud, S.; Lacord, J.; Barbe, J. C. and Rozeau, O.

   Ieee Transactions On Electron Devices, Volume 63, Issue 2, pp. 781 - 786

   Journal Article : Full Text Online

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2. Impact of Equivalent Oxide Thickness on Threshold Voltage Variation Induced by Work-Function (...)

   http://duke.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwjV1LS8NAEF6qJz34qmC1yh68CKZJNk2ThVKQalAvotQWT2FfocXS-mhBr_5yZzZJbUHEW0Jmlyzf7MzO7DwIOfW0DuOsKZ2wJVtOkwvf4RI2XhZyT3oxN9o69Afx7RO7f4iTboWcL3JhjDE2-Mw08NHe5eupmqOrzAXm4gxLe65F3MtztRY3BqDX88rgPmxgMLvKK0mPuyACMIYrajBscYlVSZdUkO2psiqIWaFdkm0yKP_LhlY38tCS3MmwEnNdFm_87xJ2yFZx4KQXOYfskoqZ7JHNpTKEVfJ1Y1Ml6TSjV6_zEfAezEHvPkba0N5wpJ5RHNLpBF7AOMf7KtqfjmcgiWgfTG2LLcUeIMpoKj8pOuCdBBSm_fBDMprQ9rBjU37ReUcvjRVTbXfY2SePyVWve-0UvRkcxbg_c3QWiSaTIJ40GHAqyASTsDawfqQfCmXgIKlFJKOA-6CFfQWQMBWqSLSYUUKI4IDQQEmeZcAoIuDYCwsEM5jMWgB6QB-IGnFLnFJVVCzHxhnj1FouHk8B2RSRTQtka-RsMeIlr9bxB20V4VnQFcjUSL1khbTYzu-pH6NOgMONf_j7qCOygXPnkZB1sj57m5vjvL_EieXTb0dp6HA

   by Youngtaek Lee and Changhwan Shin

   Ieee Transactions On Electron Devices, Volume 64, Issue 5, pp. 2452 - 2456

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3. 3-D-TCAD-Based Parasitic Capacitance Extraction for Emerging Multigate Devices and Circuits

   http://duke.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwjV1JS8NAFB6qJz24VbAuZQ7edNokk22gFDS1qHhwqRZPYVZakCppCv58Z0lDCyLeApmBZN6becu8730AnHtCRKkKGYpiFqOQUB8RpjeeiojHvJRIYRP64_T-PXh6TodZA1zWWBgppS0-kx3zaO_yxSdfmFRZ14AyLbJ3IyGew2rVNwZhSFzngRijVA9bAmQ80h29PbzcmSquoGORn4brZ8UIWVYVUxNJ53pZlOOzcB2jrJEZ7oLx8vNshXXHVZi4XMNa6fWyh-N__2QP7FR-J7xyirIPGnJ2ALZXuhE2AcNogEZaNOhamzYBH2lBTUUXh5m2qHxaGgWBN99l4cAQUPu70CS1DM8R7E36Fsxr0nJwIO0B1OtO-pDOBMymBV9My_kheB3ejLJbVFEwII5jXCIVc8qVL0UitZ8UUk5VwpLI537CZRJS5XFKUh2SiEhiL5QRUSmjitKABBFXAh8BiDkjSml9oJgYyit9_urIWFAdG3OCMW0BfymMnFeNyQ0_xkduAxSP5FaAuRFgXgmwBS7qOV-uLcefo5tGBPXIavVboL0m8_p9oA8t7ddGx7_POwFbgSHFsIjEU7BZFgt55sgk2lYpfwAum-DE

   by Jha, Niraj K.; Bhoj, Ajay N. and Joshi, Rajiv V.

   Ieee Transactions On Very Large Scale Integration (Vlsi) Systems, Volume 21, Issue 11, pp. 2094 - 2105

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