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    1. Operation Scheme Optimizations to Achieve Ultrahigh Endurance (1010) in Flash Memory

      http://duke.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwjV1JS8NAFB7Ukx7cwboxBw_2kJpZsgyUgohBBCluoHgIySykYFvRVPDf-2YmkRYRvOWQhEneMt83b0PoRBRMiSK2lb9UB4D_WVDyUAUSlCeOZJnKyBUnp9fP9PYuzS6aYnVXC6O1dslnumcvXSxfTeXMHpWBhccpTVJg6MuJCH2x1k_IADZ23xqcgAUD72pjkqE4Ax8ATJDyHuMWoYQLe5AbqvLLE7vtJdtAT-3CXG51z-eW-FOGhaTrtnvjv79hE603kBOfex3ZQkt6so3W5hoR7qCX4Zv2qoDvQYpjjYfgSsZtjSaup_hcViP9qfHjaw3-CSg9vpyomR3LofEpWFzYxaMJ7leDDPB4hW9sBu9X_6wa7KLH7PLh4ipoxi4EkvKoDkxqeSK38RhGZJLGjDMFGNyArQLe00KUBbW8h4QMpGkAwVAupUlUEnNFJNtDWBhpYlNGRheCl4QUmlCiQpnoSKnEFB3UbSWQv_m2GrmjI6HIQVq5lVbeSKuDdu1vnLvP_8EOOmxlljeG95EzQmHtgPqi_T8eO0Cr9u2-nvAQrdTvM33kR0EcO436BhG2yJg

      by Feng, Yang; Liu, Jing; Guo, Xinyi; Wu, Jixuan; Chen, Jiezhi; Zhang, Junyu; Qi, Yueran; Wang, Chengcheng and Zhan, Xuepeng

      Ieee Transactions On Electron Devices, Volume 71, Issue 11, pp. 7195 - 7198

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    2. High-Performance Top-Gated Organic Field-Effect Transistor Memory using Electrets for (...)

      http://duke.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwpV1LSwMxEA6iFz34BuuLHERPa7PZzW4DRSitqwjWB4p6WrJ5WFBUagW9-RO8-f_8JWaSdtseRNDbbkiG3WSSTCbffIPQFheR4iKByF-qA2v_R0ERExVIqzwJk0VNMhecXDu6oWfntaw5EsXv-SFKhxvMDLdewwQXxXN1SBoqlIFI8hBQBhwO7UDdBBbSSbO8RkhTf62chADwCq8HrI2EVsebj-1KU9DBryPWKu1vN9kcuht8qMNa73qsifc6jIGwB2yO__mneTTbt0pxw6vRAprQD4toZoSrcAl9AiLk6_3jdBhpgC8en2wJOOAU9kGdEmcAibOlnhYZu73QUZHgemfvGHC9b_VqZw8D4P4W77ssPLr3jK1QbBcYgON1rJjTLhBZKJwBYWdxr3G70W6BiMya-x08FLSMLrP9i-Zh0M_qYMefR8SqQqilYFZHICeFZlJHLBZEkJSqOFIxL0RhBOGax4mWxBAmIGsWBW5B28BEKwhzI01iCma04HERhkKHNFREppoplRpRQcFgOHPZ5zqHlBv3uWdppjn0dF72dAXtlPWfPMvHjzW3nXaU1UT3DrBxKcuv2gc5r7Vbh0fnaZ5WEHUj_Yu8vNHKjsu31b80WkPT8AwOZxqvo8le90Vv-NwWm246fAN3aA7A

      by You, In-Kyu; Khim, Dongyoon; Kim, Dong-Yu; Jung, Soon-Won; Kim, Juhwan; Yang, Byung-Do; Kang, Minji; Baeg, Kang-Jun and Noh, Yong-Young

      Advanced Functional Materials, Volume 22, Issue 14, pp. 2915 - 2926

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    3. Multi-level flash memory device based on stacked anisotropic ReS2–boron (...)

      http://duke.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwpZ1bb9MwFICtAi_wgLhJbGzISLCXKiyOc7GlaQhtrRCbQEArtqfKjR01EzRT2yD2xn_gH_LA7-Acx04zNCEQL1HitlZSfzk-x-diQp5KxbVUKWb-RiYA_Z8H0zjUQQ7wpEk-FXlik5PF69Po3XsxPOj1fvpcGBvLjPb50r0qV2Q5YL4qxjde-B2mXpTOsY7rSyE7HB8NJmD7jna-wMh2rmHQ_Ru484wP_5cXaANiMP_2H5hpO4UGOAdy4AjswPGv6LF5ucEnjCjqF6Bgz_qfMST3ApOs4MH6OPlpdDSAcglyAOu9lstqtajObWD-h8gHUfAplkjog-BYlNq0rbZONohZUFRhYKumim29cAGNTlkGyV8tgaG1-6i2onv-tax900njXzmt15R_9Evgs_KsbH_browfqnJWq-5qB5i26AASLZ_NmooPaLUBK25bvLXcjDBIkvOmOPpz023LLgv-qAM474pxLFIXdnQCvE6vnHBCjvVadThfwFmadKZVH0rw5u1kOD4-nowGJ6Nr5EaEKhkGFaRHXmNIJbc7_rU37svocrm77vmyssCdBjS6Q24704W-bGi5S3pmfo_c6hS0vE9WHW7o3mzfokMbdPZ2Z_u0wYdafGg1pw4f2sGHIj4_vn234FAHDlx7ZOjvyDwg4-FgdPAqcPt6BGdg4K8CsBiSKNHoIk-lzHLF8likIsHNFWC-UUIJDWqojnIwzk0ohWKpNixWiVCcxTl_SKgs8iItpklhlIynjCnDIqbDPDOJ1lmhNsiW_7cm7r1aTkCVxXKPsZAb5En7MfCDTjI1N1XdfEdmjGXp5p-7eERurgHdItfhqc12s6XIYzu8vwBXwpqu

      by Xie, Yuan; Wu, Enxiu; Hu, Xiaodong; Liu, Jing; Wang, Shijie and Zhang, Daihua

      Nanoscale, Volume 12, Issue 36, pp. 18800 - 18806

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    1. Flash Memory Devices

      https://find.library.duke.edu/catalog/DUKE99119536938808501

      Book : View Online

    2. Flash memory integration : performance and energy issues

      https://find.library.duke.edu/catalog/DUKE99119544518708501

      Jalil Boukhobza, Pierre Olivier.

      Book : View Online

    3. Flash memory integration : performance and energy issues

      https://find.library.duke.edu/catalog/DUKE007821583

      Jalil Boukhobza, Pierre Olivier.

      Book : View Online

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      Some example issues: (2.1) If you are a musician NOT affiliated with GEMA you have to pay to perform your own music or prove to them that your (...)

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      Radio Haiti flash drives at the Université d’État d’Haïti campus in Limonade.

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